"Impurity Band Mott Insulators - a new route to (High T_c) Superconductivity"
Prof. G. Baskaran

講演題目：　Impurity Band Mott Insulators - a new route to (High T_c) Superconductivity
講　師　：　Prof. G. Baskaran
　　　　　(Institute of Mathematical Sciences, Chennai, India
　 　　　　および 東北大学金属材料研究所付属　材料科学国際フロンティアセンター・客員教授)
日　時　：　平成16年5月27日 (木) 16:00-
場　所　：　北海道大学大学院理学研究科物理学専攻　大学院講義室 理学部2号館（2－11号室）

要　旨　：
　 　Mott insulators have given us a nice route to reach a correlation driven high T_c superconductivity and novel superconductors as evidenced by cuprate and organic superconductors. Inspired by a recent finding [1] of superconductivity in boron doped diamond. I suggest that impurity band Mott insulators provide another route for high T_c superconductivity. I will illustrate this idea by going into some details of an electron correlation driven superconductivity mechanism I have suggested for the heavily doped diamond [2]. I argue that the uncompensated boron impurity band is strongly correlated and undergoes a Anderson-Mott insulator to superconductivity transition as the boron density is increased across a critical concentration.
[1] E.A. Ekimov et al., Nature (London), 428 542 (2004)
[2] G. Baskaran, cond-mat/0404286

世話人　 熊谷 健一
（kumagai@phys.sci.hokudai.ac.jp)
北海道大学大学院理学研究科

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